3. detail go to our website at www.twtysemi.com DMN2100UDM new product features ? low on-resistance ? 55 m @ v gs = 4.5v ? 70 m @ v gs = 2.5v ? 90 m @ v gs = 1.8v ? 130 m @ v gs = 1.5v ? low gate threshold voltage ? low input capacitance ? fast switching speed ? esd protected gate ? lead free by design/rohs compliant (note 2) ? "green" device (note 3) ? qualified to aec-q101 standard for high reliability mechanical data ? case: sot-26 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminal connections: see diagram ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.015 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss 20 v gate-source voltage v gss 8 v drain current (note 1) i d 3.3 a pulsed drain current (note 1) i dm 13 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value units total power dissipation (note 1) p d 900 mw thermal resistance, junction to ambient r ja 139 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 4) drain-source breakdown voltage bv dss 20 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? 1 a v ds = 20v, v gs = 0v gate-source leakage i gss ? ? 1 a v gs = 8v, v ds = 0v on characteristics (note 4) gate threshold voltage v gs ( th ) 0.6 ? 1.0 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) ? 32 43 56 80 55 70 90 130 m v gs = 4.5v, i d = 6a v gs = 2.5v, i d = 4.0a v gs = 1.8v, i d = 1.5a v gs = 1.5v, i d = 1.0a forward transfer admittance |y fs | ? 8 ? s v ds =10v, i d = 6a diode forward voltage (note 4) v sd ? 0.7 1.1 v v gs = 0v, i s = 2a dynamic characteristics input capacitance c iss ? 555 ? pf v ds = 10v, v gs = 0v f = 1.0mhz output capacitance c oss ? 112 ? pf reverse transfer capacitance c rss ? 84 ? pf notes: 1. device mounted on fr-4 pcb, or mini mum recommended pad layout with 2oz. copper pads. 2. no purposefully added lead. 4. short duration pulse test used to minimize self-heating effect. sot-26 top view internal schematic g s d d d d top view esd protected 1 2 3 4 5 6 g1 s2 g2 d2 s1 d1 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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